Efforts for global sustainability require new technologies and approaches for power conversion in electric vehicles, solar and wind turbines, data centers and industrial motors. Silicon can no longer meeting voltage and conversion demands—but this company is working on a way with its breakthrough technology.
Semiconductor device firm Odyssey Semiconductor Technologies, Inc. (OTCQB:ODII) develops innovative high-voltage, vertical power switching components based on proprietary Gallium Nitride ("GaN") processing technology. The company announced in its press release that it reached a technology milestone developing one of the most advanced vertical GaN power field-effect transistors (FETs).
As silicon can no longer meet the voltage and conversion efficiency demanded and Gallium-Nitride (GaN), deployed as lateral (or parallel) conduction FETs fails to provide the voltage rating. But Odyssey was founded to commercialize vertical GaN FETs that can provide the conversion efficiency of GaN with the higher voltage rating of SiC. The approach will lead to breakthrough performance for the most demanding applications.
Shares were trading up at $1.70 in morning trade.
