Navitas Semiconductor (NASDAQ: NVTS), the industry-leader in gallium nitride (GaN) power ICs, announced that OnePlus has once again chosen GaNFast™ next-gen power ICs to ultra-fast-charge its new flagship smartphone, the OnePlus 10T.
The new OnePlus 10T features the latest Qualcomm Snapdragon® 8+ Gen 1 (4 nm) chipset, a 120 Hz FHD + AMOLED display screen, and 50 MP main camera, with advanced Cryo-Velocity Vapor cooling, all driven by a powerful 4,800 mAhr battery.
The 150W-capable SUPERVOOC Endurance Edition delivers up to a day’s power after just 10 minutes of charging, with a full charge – from 1-100% – taking only 19 minutes.
New York was the focus for the 10T’s debut, with a special launch event at the famous Gotham Hall, and a Navitas-OnePlus co-operative promotion on the Nasdaq Tower in Times Square.
“It’s great to be back for an in-person launch, and once again partnering with Navitas to deliver reliable, small, light and fast charging,” said Mr. Kinder LIU, COO of OnePlus. “From the 10R launched in July, to the 10T in August, and onwards to future designs, we expect to continue our in-depth collaboration with Navitas to deliver ultra-portable, ultra-fast user experiences.”
GaNFast ICs integrate GaN power with drive, control, protection and sensing to enable 3x faster charging with up to 40% energy savings in only half the size and weight of legacy silicon solutions. Using an NV6125 GaN IC for the high-frequency boost PFC, followed by a high-frequency QR flyback converter, the 160 W charger measures just 58 x 57 x 30 mm (99 cc) with power density over 1.6W/cc.
NVTS shares added 40 cents, or 6.7%, to $6.28.
